IXSH15N120AU1
PRELIMINARY DATA SHEET
IGBT with Diode
"S" Series - Improved SCSOA Capability
C
G E Symbol
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IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L ...
