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APT20GF120BR. 20GF120BR Datasheet

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APT20GF120BR. 20GF120BR Datasheet






20GF120BR APT20GF120BR. Datasheet pdf. Equivalent




20GF120BR APT20GF120BR. Datasheet pdf. Equivalent





Part

20GF120BR

Description

APT20GF120BR

Manufacture

Advanced Power Technology

Datasheet
Download 20GF120BR Datasheet


Advanced Power Technology 20GF120BR

20GF120BR; APT20GF120BR APT20GF120BR 1200V 32A Fa st IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector- Emitter On voltage. • Low Forward Vo ltage Drop • Low Tail Current www.Dat aSheet4U.com • Avalanche Rated MAXIMU M RATINGS Symbol VCES VC.


Advanced Power Technology 20GF120BR

GR VGE I C1 I C2 I CM I LM EAS PD TJ,TST G TL Parameter Collector-Emitter Voltag e • High Freq. Switching to 20KHz Ultra Low Leakage Current • RBSOA a nd SCSOA Rated G C E C G E All Ra tings: TC = 25°C unless otherwise spec ified. APT20GF120BR UNIT 1200 1200 ±2 0 32 20 64 40 22 200 -55 to 150 300 °C mJ Watts Amps Volts Collector-Gate Vo ltage (RGE = 20KW) Gate-Emi.


Advanced Power Technology 20GF120BR

tter Voltage Continuous Collector Curren t @ TC = 25°C Continuous Collector Cur rent @ TC = 90°C Pulsed Collector Curr ent 1 @ TC = 25°C RBSOA Clamped Indu ctive Load Current @ Rg = 11W TC = 125 C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead T emp. for Soldering: 0.063" from Case fo r 10 Sec. 2 STATIC EL.



Part

20GF120BR

Description

APT20GF120BR

Manufacture

Advanced Power Technology

Datasheet
Download 20GF120BR Datasheet




 20GF120BR
APT20GF120BR
APT20GF120BR
1200V 32A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
• Low Forward Voltage Drop
www.DataSheet4LUo.cwomTail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
G
C
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT20GF120BR
UNIT
VCES
VCGR
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
±20
32
20
64
40
22
200
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)
Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
mA
nA
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61





 20GF120BR
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
www.DataSheet4Utd.c(omff)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10W
MIN
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +25°C
VCE = 20V, IC = IC2
APT20GF120BR
TYP
1050
100
63
95
13
62
15
67
92
93
17
30
105
71
1.3
1.5
2.7
17
35
93
70
2.4
12
MAX
1210
150
110
140
20
90
30
130
140
190
34
60
160
140
3.0
3.0
5.0
30
70
140
140
5.0
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RQJC
RQJA
Junction to Case
Junction to Ambient
WT Package Weight
MIN
Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, RGE = 25W, L = 110µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.63
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m





 20GF120BR
APT20GF120BR
50
40
VGE=17 & 15V
13V
50
VGE=17 & 15V
13V
40
30 30
11V 11V
20 20
10
9V
www.DataSheet4U.com
0 7V
0 4 8 12 16 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
60
250µSec. Pulse Test
VGE = 15V
40 TC=-55°C
TC=+25°C
30 TC=+150°C
20
10
0
02 4 68
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
2,000
1,000
500
Cies
100
f = 1MHz
Coes
50 Cres
10 9V
0 7V
0 4 8 12 16 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (TJ = 150°C)
100
50 OPERATION
LIMITED
BY
VCE (SAT)
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1mS
1
1
5 10
50 100
1200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
10mS
20
IC = IC2
TJ = +25°C
16
12 VCE=240V
8
VCE=600V
4
10
0.01 0.1 1.0 10 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
0.5
D=0.5
0
0 40 80 120 160
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.1
0.05
0.01
0.005
0.00110-5
0.2
0.1
0.05
0.02
0.01
Note:
t1
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10



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