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HAT2129H

Renesas Technology
Part Number HAT2129H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 7, 2008
Detailed Description HAT2129H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • Hig...
Datasheet PDF File HAT2129H PDF File

HAT2129H
HAT2129H

Overview
HAT2129H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0049-0500 Rev.
5.
00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol...


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