| Feature |
PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers www.DataSheet4U.com • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 06N03
Drain
Gate
Source
Maximum RATINGS and Ther. |
