PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
RDS(ON), VGS@10V,IDS@30A=6mΩ RDS(ON), VGS@4.5V,IDS@30A=9mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers www.DataSheet4U.com Fully Characterized Avalanche Voltage and Current Pb free...
