drop Diode. 11DQ06 Datasheet

11DQ06 Diode. Datasheet pdf. Equivalent


Part 11DQ06
Description Low Forward Voltage drop Diode
Feature SBD Type :11DQ06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power .
Manufacture Nihon Inter Electronics Corporation
Datasheet
Download 11DQ06 Datasheet


Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 SCHOTTKY RECTI 11DQ06 Datasheet
Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 www.DataSheet4 11DQ06 Datasheet
SENSITRON SEMICONDUCTOR  Technical Data Data Sheet 2851, Re 11DQ06 Datasheet
SBD Type :11DQ06 OUTLINE DRAWING FEATURES * Miniature Size 11DQ06 Datasheet
11DQ06 Datasheet
11DQ03 - 11DQ10 PRV : 30 - 100 Volts IO : 1.1 Ampere SCHOTT 11DQ06 Datasheet
Recommendation Recommendation Datasheet 11DQ06 Datasheet




11DQ06
SBD Type :11DQ06
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 30 Volts thru 100 Volts Types Available
* 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
www.DataSheet4U.cMomaximum Ratings
Approx Net Weight:0.32g
Rating
Symbol
11DQ06
Unit
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Without Fin or
Average Rectified P.C.Board
Output Current P.C.Board
mounted
RMS Forward Current
VRRM
VRSM
IO
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Electrical Thermal Characteristics
0.89
1.0
25
60
65
Ta=25°C*
Ta=54°C*
50Hz Half Sine
Wave Resistive Load
1.57
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
V
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance (Junction to Ambient)
*:Print Lands=5x5mm,Both Sides
IRM
VFM
Rth(j-a)
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 1.0A
Without Fin or P.C.Board
P.C.Board mounted
-
-
-
-1
- 0.55
-
130
81
Unit
mA
V
°C/W



11DQ06
11DQ06 OUTLINE DRAWING (Dimensions in mm)
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