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H7N0607DS

Renesas Technology
Part Number H7N0607DS
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 20, 2008
Detailed Description H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features...
Datasheet PDF File H7N0607DS PDF File

H7N0607DS
H7N0607DS

Overview
H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.
3.
00 Jan.
27.
2005 Features • Low on-resistance RDS(on) = 26 mΩ typ.
www.
DataSheet4U.
com • Low drive current.
• Capable of 4.
5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1.
Gate 2.
Drain 3.
Source 4.
Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
...


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