APM3009N
N-Channel Enhancement Mode MOSFET
Features
30V/70A , RDS(ON)=7mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design for Extremely Low R Reliable and Rugged TO-220 , TO-252 and TO-263 Packages
Pin Description
DS(ON) w w w . D a t a S h e e t 4 U . c o m
1
2
3
Applications
Power Management in Desktop C...
