K2003 Datasheet: 2SK2003-01MR





K2003 2SK2003-01MR Datasheet

Part Number K2003
Description 2SK2003-01MR
Manufacture Fuji Electric
Total Page 3 Pages
PDF Download Download K2003 Datasheet PDF

Features: 2SK2003-01MR N-CHANNEL SILICON POWER MOS FET Features High speed switching Low o n-resistance No secondary breakdown Low driving power High voltage www.DataShe et4U.com VGS=±30V Guarantee Avalanche- proof FUJI POWER MOSFET FAP-IIA SERIE S Outline Drawings TO-220F15 Applicati ons Switching regulators UPS DC-DC conv erters General purpose power amplifier 2.54 3. Source JEDEC EIAJ SC-67 Max imum ratings and characteristics Absolu te maximum ratings ( Tc=25°C unless ot herwise specified) Item Drain-source vo ltage Continuous drain current Pulsed d rain current Continuous reverse drain c urrent Gate-source peak voltage Max. po wer dissipation Operating and storage t emperature range Symbol V DS ID ID(puls ] IDR VGS PD Tch Tstg Rating 600 4 16 4 ±30 40 +150 -55 to +150 Unit V A A A V W °C °C Equivalent circuit schemat ic Drain(D) Gate(G) Source(S) Electr ical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain curr.

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2SK2003-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
FAP-IIA SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
www.DataSheet4VU.GcoSm=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-220F15
2.54
JEDEC
EIAJ
3. Source
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
IDR
VGS
PD
Tch
Tstg
Rating
600
4
16
4
±30
40
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Equivalent circuit schematic
Gate(G)
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=600V VGS=0V
VGS=±30V VDS=0V
ID=2A VGS=10V
ID=2A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10
ID=4A
VGS=10V
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-a)
Rth(ch-c)
Test Conditions
channel to ambient
channel to case
Min. Typ.
600
2.5 3.0
10
0.2
10
2.0
24
1000
85
20
20
15
45
15
4
1.1
400
2
Max. Units
3.5
500
1.0
100
2.4
1500
130
30
30
25
70
25
1.65
V
V
µA
mA
nA
S
pF
ns
A
V
ns
µC
Min. Typ.
Max. Units
62.5 °C/W
3.125 °C/W
1

        






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