45N03LTG P45N03LTG Datasheet

45N03LTG Datasheet, PDF, Equivalent


Part Number

45N03LTG

Description

P45N03LTG

Manufacture

Niko

Total Page 3 Pages
Datasheet
Download 45N03LTG Datasheet


45N03LTG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P45N03LTG
TO-220
Lead Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 20m
ID
45A
D
G
www.DataSheet4U.com
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
45
28
140
20
140
5.6
65
33
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.7
MAXIMUM
3
70
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
25
0.8 1.2
2.5
V
±250 nA
25
µA
250
1 AUG-13-2004

45N03LTG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P45N03LTG
TO-220
Lead Free
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 18A
VGS = 10V, ID = 20A
VDS = 15V, ID = 30A
DYNAMIC
www.DataSheIentp4Uut.cComapacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V, RL = 1
ID 30A, VGS = 10V, RGS = 2.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
45
20
15
16
A
30
m
28
S
600
290 pF
100
25
2.9 nC
7.0
7.0
7.0
nS
24
6.0
45
150
1.3
37
200
0.043
A
V
nS
A
µC
REMARK: THE PRODUCT MARKED WITH “P45N03LTG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 AUG-13-2004


Features NIKO-SEM N-Channel Logic Level Enhancem ent Mode Field Effect Transistor P45N0 3LTG TO-220 Lead Free D PRODUCT SUMMAR Y V(BR)DSS 25 www.DataSheet4U.com RDS( ON) 20m ID 45A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAM ETERS/TEST CONDITIONS Gate-Source Volta ge Continuous Drain Current Pulsed Drai n Current Avalanche Current Avalanche E nergy Repetitive Avalanche Energy2 Powe r Dissipation L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Tempe rature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESI STANCE Junction-to-Case Junction-to-Amb ient Case-to-Heatsink 1 2 1 1 SYMBOL V GS LIMITS ±20 45 28 140 20 140 5.6 65 33 -55 to 150 275 UNITS V TC = 25 ° C TC = 100 °C ID IDM IAR EAS EAR PD T j, Tstg TL A mJ W °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 70 UN ITS °C / W 0.7 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS .
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