BAP63LX Diode Datasheet

BAP63LX Datasheet, PDF, Equivalent


Part Number

BAP63LX

Description

Silicon PIN Diode

Manufacture

NXP

Total Page 8 Pages
Datasheet
Download BAP63LX Datasheet


BAP63LX
BAP63LX
Silicon PIN diode
Rev. 01 — 11 December 2007
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Planar PIN diode in a SOD882T leadless ultra small plastic SMD package.
1.2 Features
I High speed switching for RF signals
I Low diode capacitance
I Low forward resistance
I Very low series inductance
I For applications up to 3 GHz
1.3 Applications
I RF attenuators and switches
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
Simplified outline Symbol
[1]
12
Transparent
top view
sym006
[1] The marking bar indicates the cathode.
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
BAP63LX
-
leadless ultra small plastic package; 2 terminals;
body 1 × 0.6 × 0.4 mm
Version
SOD882T

BAP63LX
NXP Semiconductors
BAP63LX
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP63LX
Marking code
LD
5. Limiting values
www.DataSheet4U.com
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR reverse voltage
-
IF forward current
-
Ptot
total power dissipation
Tsp = 90 °C
-
Tstg storage temperature
65
Tj junction temperature
65
6. Thermal characteristics
Max
50
100
135
+150
+150
Unit
V
mA
mW
°C
°C
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ Unit
78 K/W
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF forward voltage
IF = 50 mA
IR reverse current
VR = 20 V
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
ISL isolation
see Figure 3; VR = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
Min Typ Max Unit
-
0.95 1.1
V
- - 10 nA
- 0.34 -
pF
- 0.29 -
pF
- 0.24 0.30 pF
- 2.3 3.3
-
1.87 3.0
-
1.19 1.8
-
0.93 1.5
- 15.9 -
- 10.5 -
- 8.3 -
dB
dB
dB
© NXP B.V. 2007. All rights reserved.
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Features BAP63LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. P roduct profile 1.1 General description www.DataSheet4U.com Planar PIN diode in a SOD882T leadless ultra small plast ic SMD package. 1.2 Features I I I I I High speed switching for RF signals Lo w diode capacitance Low forward resista nce Very low series inductance For appl ications up to 3 GHz 1.3 Applications I RF attenuators and switches 2. Pinni ng information Table 1. Pin 1 2 Discret e pinning Description cathode anode 1 2 sym006 Simplified outline [1] Symbo l Transparent top view [1] The marki ng bar indicates the cathode. 3. Order ing information Table 2. Ordering infor mation Name BAP63LX Description leadles s ultra small plastic package; 2 termin als; body 1 × 0.6 × 0.4 mm Version SO D882T Type number Package NXP Semicond uctors BAP63LX Silicon PIN diode 4. M arking Table 3. BAP63LX Marking Marking code LD Type number 5. Limiting value s www.DataSheet4U.com Table 4. Limiting values In accordance with the .
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