PIN Diode. BAP63LX Datasheet

BAP63LX Diode. Datasheet pdf. Equivalent


NXP BAP63LX
BAP63LX
Silicon PIN diode
Rev. 01 — 11 December 2007
Product data sheet
1. Product profile
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1.1 General description
Planar PIN diode in a SOD882T leadless ultra small plastic SMD package.
1.2 Features
I High speed switching for RF signals
I Low diode capacitance
I Low forward resistance
I Very low series inductance
I For applications up to 3 GHz
1.3 Applications
I RF attenuators and switches
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
Simplified outline Symbol
[1]
12
Transparent
top view
sym006
[1] The marking bar indicates the cathode.
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
BAP63LX
-
leadless ultra small plastic package; 2 terminals;
body 1 × 0.6 × 0.4 mm
Version
SOD882T


BAP63LX Datasheet
Recommendation BAP63LX Datasheet
Part BAP63LX
Description Silicon PIN Diode
Feature BAP63LX; BAP63LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 Gener.
Manufacture NXP
Datasheet
Download BAP63LX Datasheet




NXP BAP63LX
NXP Semiconductors
BAP63LX
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP63LX
Marking code
LD
5. Limiting values
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Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR reverse voltage
-
IF forward current
-
Ptot
total power dissipation
Tsp = 90 °C
-
Tstg storage temperature
65
Tj junction temperature
65
6. Thermal characteristics
Max
50
100
135
+150
+150
Unit
V
mA
mW
°C
°C
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ Unit
78 K/W
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF forward voltage
IF = 50 mA
IR reverse current
VR = 20 V
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
ISL isolation
see Figure 3; VR = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
Min Typ Max Unit
-
0.95 1.1
V
- - 10 nA
- 0.34 -
pF
- 0.29 -
pF
- 0.24 0.30 pF
- 2.3 3.3
-
1.87 3.0
-
1.19 1.8
-
0.93 1.5
- 15.9 -
- 10.5 -
- 8.3 -
dB
dB
dB
© NXP B.V. 2007. All rights reserved.
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NXP BAP63LX
NXP Semiconductors
Table 6. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Lins insertion loss
see Figure 4; IF = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
www.DataSheeLti4nsU.com insertion loss
see Figure 4; IF = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins insertion loss
see Figure 4; IF = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins insertion loss
see Figure 4; IF = 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τL charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 ; measured at
IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
BAP63LX
Silicon PIN diode
Min Typ Max Unit
- 0.20 -
- 0.20 -
- 0.21 -
dB
dB
dB
- 0.17 -
- 0.17 -
- 0.19 -
dB
dB
dB
- 0.12 -
- 0.13 -
- 0.15 -
dB
dB
dB
- 0.11 -
- 0.11 -
- 0.15 -
- 0.32 -
dB
dB
dB
µs
- 0.4 -
nH
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
© NXP B.V. 2007. All rights reserved.
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