N-Channel MOSFET. APT58M50J Datasheet

APT58M50J MOSFET. Datasheet pdf. Equivalent


Microsemi Corporation APT58M50J
APT58M50J
500V, 58A, 0.065Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
www.DataSheet4U.com
SS
G D SOT-227
"UL Recognized"
ISOTOP®
file # E145592
APT58M50J
Single die MOSFET
G
D
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
Ratings
58
37
270
±30
1845
42
Unit
A
V
mJ
A
Min
-55
2500
Typ
0.15
1.03
29.2
Max Unit
540 W
0.23
°C/W
150 °C
V
oz
g
10 in·lbf
1.1 N·m


APT58M50J Datasheet
Recommendation APT58M50J Datasheet
Part APT58M50J
Description N-Channel MOSFET
Feature APT58M50J; APT58M50J 500V, 58A, 0.065Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-chann.
Manufacture Microsemi Corporation
Datasheet
Download APT58M50J Datasheet




Microsemi Corporation APT58M50J
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 42A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 2.5mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Typ
0.60
0.055
4
-10
APT58M50J
Max Unit
V
V/°C
0.065 Ω
5V
mV/°C
25
500
µA
±100 nA
Dynamic Characteristics
Symbol
gfs
www.DataSheet4U.cCoCmrissss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 42A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 42A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 42A
RG = 2.2Ω 6 , VGG = 15V
Typ
65
13500
185
1455
845
425
340
75
155
60
70
155
50
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 42A, TJ = 25°C, VGS = 0V
ISD = 42A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 42A, di/dt ≤1000A/µs, VDD = 100V,
TJ = 125°C
Min
Typ Max Unit
58
A
270
1.0
720
20
V
ns
µC
8 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 2.08mH, RG = 2.2Ω, IAS = 42A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



Microsemi Corporation APT58M50J
350
VGS = 10V
300
250
TJ = -55°C
200
TJ = 25°C
150
www.DataSheet4U.com
100
TJ = 150°C
50
0 TJ = 125°C
0 5 10 15 20 25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 42A
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
120
100 TJ = -55°C
80 TJ = 25°C
TJ = 125°C
60
40
20
0 0 10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 42A
14
90
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0 0 100 200 300 400 500
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
160
140
TJ = 125°C
VGS= 7,8 & 10V
APT58M50J
120
100 6V
80
60
40
5V
20
4.5V
0 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
280
240
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
200
160 TJ = -55°C
TJ = 25°C
120
TJ = 125°C
80
40
00
20,000
10,000
12345678
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1000
100
Coss
Crss
10 0
100 200
300 400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
280
240
200
160
TJ = 25°C
120
TJ = 150°C
80
40
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)