RICMOS™ SOI GATE ARRAYS
FEATURES
Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r Array Sizes from 40K to 390K Available Gates (Raw) HX2000 Supports 5V Core Operation HX2000r www.DataSheet4U.com Supports 3.3V Core Operation
HX2000 HX2000r
FAMILY
Total Dose Hardn...
