Power Transistors. 2SD5702 Datasheet

2SD5702 Transistors. Datasheet pdf. Equivalent

Part 2SD5702
Description Silicon NPN Power Transistors
Feature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702 DESCRIPTION ¡.
Manufacture Inchange
Datasheet
Download 2SD5702 Datasheet

Inchange Semiconductor Product Specification Silicon NPN P 2SD5702 Datasheet
Recommendation Recommendation Datasheet 2SD5702 Datasheet





2SD5702
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5702
DESCRIPTION
With TO-3P(H)IS package
Built-in damper diode
High voltage ,high speed
APPLICATIONS
www.DataSheet4U.Fcoomr color display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
6
16
60
150
-55~150
UNIT
V
V
V
A
A
W



2SD5702
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
www.DataSheet4U.com
ICBO
Base-emitter saturation voltage
Collector cut-off current
IC=4A; IB=0.8A
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
VF Diode forward voltage
tf Fall time
IF=6A
IC=4A ;IB1=0.8A;IB2=-1.6A
VCC=200V; RL=50
Product Specification
2SD5702
MIN TYP. MAX UNIT
2.0 5.0
V
1.5 V
10 A
40 200 mA
10 30
5 15
3 MHz
2.0 V
0.4 s
2





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