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2SD5702 Datasheet, Equivalent, Power Transistors.Silicon NPN Power Transistors Silicon NPN Power Transistors |
| Part | 2SD5702 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistors
INCHA NGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Re liability
·Built-in Damper Diode ·Min imum Lot-to-Lot variations for robust d evice
performance and reliable operatio n
APPLICATIONS ·Designed for use in h orizontal deflection circuits of
colour TV receivers. ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 0 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 6 A ICM Collector Cur . |
| Manufacture | Inchange |
| Datasheet |
| Part | 2SD5702 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistors
INCHA NGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Re liability
·Built-in Damper Diode ·Min imum Lot-to-Lot variations for robust d evice
performance and reliable operatio n
APPLICATIONS ·Designed for use in h orizontal deflection circuits of
colour TV receivers. ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 0 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 6 A ICM Collector Cur . |
| Manufacture | Inchange |
| Datasheet |
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