F11NM80 MOSFET Datasheet

F11NM80 Datasheet, PDF, Equivalent


Part Number

F11NM80

Description

N-CHANNEL Power MOSFET

Manufacture

STMicroelectronics

Total Page 22 Pages
Datasheet
Download F11NM80 Datasheet


F11NM80
STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on)
max
RDS(on)*Qg
ID
STB11NM80
STF11NM80
STI11NM80 800 V
STP11NM80
STW11NM80
< 0.40 Ω
14Ω*nC
11 A
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)*Qg in the industry
Applications
Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STI11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
I11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
September 2011
Doc ID 9241 Rev 11
1/22
www.st.com
22

F11NM80
Contents
Contents
STB/F/I/P/W11NM80
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 9241 Rev 11


Features STB11NM80 - STF11NM80 STP11NM80 - STW11N M80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Po wer MOSFET Features www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.4 0 Ω RDS(on)*Qg 14Ω*nC 14Ω*nC 14 *nC 14Ω*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO- 247 D²PAK STW11NM80 800 V ■ ■ Low input capacitance and gate charg e Low gate input resistance Best RDS(on ) *Qg in the industry 3 1 2 3 1 2 TO- 220 TO-220FP Application ■ Switchi ng applications Figure 1. Internal sc hematic diagram Description The MDmesh ™ associates the multiple drain proce ss with the Company’s PowerMesh™ ho rizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance tha t is significantly better than that of similar competition’s products. Tabl e 1. Device summary Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Pack.
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