FLK207MH-14 FET Datasheet

FLK207MH-14 Datasheet, PDF, Equivalent


Part Number

FLK207MH-14

Description

Ku Band Power GaAs FET

Manufacture

Eudyna Devices

Total Page 4 Pages
Datasheet
Download FLK207MH-14 Datasheet


FLK207MH-14
FLK207MH-14
X, Ku Band Power GaAs FET
FEATURES
wHwwig.DhatOaSuhtepeut4tUP.coomwer: P1dB = 32.5dBm(Typ.)
• High Gain: G1dB = 6.0dB(Typ.)
• High PAE: ηadd = 27%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK207MH-14 is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with
gate resistance of 250.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
12.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 500mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 40mA -1.0
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
VGSO
P1dB
G1dB
ηadd
IGS = -40µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
-5
31.5
5.0
-
Limit
Typ. Max.
800 1200
400 -
-2.0 -3.5
--
32.5 -
6.0 -
27 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 10 12
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
August 1999
1

FLK207MH-14
FLK207MH-14
X, Ku Band Power GaAs FET
www.DataShPeeOt4WU.cEomR DERATING CURVE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1000
800 VGS =0V
600 -0.5V
-1.0V
400
-1.5V
200
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
f = 14.5GHz
IDS 0.6 IDSS
VDS=10V
VDS=8.5V
32
Pout
30
28
26
24 ηadd
40
20
18 20 22 24 26 28
Input Power (dBm)
P1dB & ηadd vs. VDS
f = 14.5 GHz
IDS 0.6 IDSS
33
32 P1dB
40
31 30
30 ηadd 20
29 10
8 9 10
Drain-Source Voltage (V)
2


Features FLK207MH-14 X, Ku Band Power GaAs FET FE ATURES •www.DataSheet4U.com High Outp ut Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliabili ty • Hermetic Metal/Ceramic Package DESCRIPTION The FLK207MH-14 is a power GaAs FET that is designed for general p urpose applications in the Ku-Band freq uency range as it provides superior pow er, gain, and efficiency. Fujitsu’s s tringent Quality Assurance Program assu res the highest reliability and consist ent performance. ABSOLUTE MAXIMUM RATIN G (Ambient Temperature Ta=25°C) Item D rain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temper ature Channel Temperature Symbol VDS VG S PT Tstg Tch Tc = 25°C Condition Rati ng 15 -5 12.5 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the follo wing conditions for the reliable operat ion of GaAs FETs: 1. The drain-source o perating voltage (VDS) should not excee d 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and .
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