K2210 Datasheet: 2SK2210





K2210 2SK2210 Datasheet

Part Number K2210
Description 2SK2210
Manufacture Matsushita Electric
Total Page 4 Pages
PDF Download Download K2210 Datasheet PDF

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Power F-MOS FETs
2SK2210
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
* L= 5mH, IL= 4A, 1 pulse
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
750
±30
±4
±8
40
50
2
150
–55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 600V, VGS= 0
VGS= ±30V, VDS= 0
ID=1mA, VGS= 0
VDS= 25V, ID=1mA
VGS=10V, ID= 2A
VDS= 25V, ID= 2A
IDR=4A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A
VGS=10V, RL=100
2SK2210
9.9±0.3
ø3.2±0.1
Unit : mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7˚ 1 2 3
1 : Gate
2 : Drain
3 : Source
TO-220E Package
Min Typ Max Unit
10 µ A
±1 µ A
750 V
2 4V
1.8 2.4
1.3 2.2
S
–1.6 V
600 pF
105 pF
45 pF
25 ns
50 ns
65 ns
170 ns
2.5 ˚C/W
62.5 ˚C/W

           






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