2SA1008 Transistors Datasheet

2SA1008 Datasheet, PDF, Equivalent


Part Number

2SA1008

Description

Silicon POwer Transistors

Manufacture

SavantIC

Total Page 5 Pages
Datasheet
Download 2SA1008 Datasheet


2SA1008
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2331
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1008
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-100
-100
-7
-2.0
-4.0
-1.0
1.5
15
150
-55~150
UNIT
V
V
V
A
A
A
W

2SA1008
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1008
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-1.0A ,IB=-0.1A,L=1mH
-100
V
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
-0.6 V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
-1.5 V
ICBO Collector cut-off current
VCB=-100V; IE=0
-10 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-10 µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40 200
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=-1.0A IB1=- IB2=-0.1A
RL=50A;VCCB50V
0.5 µs
1.5 µs
0.5 µs
hFE-2 Classifications
ML
K
40-80
60-120 100-200
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -220 package ·Complement to type 2SC23 31 ·Low collector saturation voltage Fast switching speed APPLICATIONS ·Sw itching regulators ·DC/DC converters High frequency power amplifiers PINNIN G PIN 1 2 3 DESCRIPTION Emitter Collect or;connected to mounting base Base 2SA 1008 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(T a=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collec tor-emitter voltage Emitter-base voltag e Collector current Collector current-P eak Base current Ta=25 PT Total power d issipation TC=25 Tj Tstg Junction tempe rature Storage temperature 15 150 -55~1 50 CONDITIONS Open emitter Open base Op en collector VALUE -100 -100 -7 -2.0 -4 .0 -1.0 1.5 W UNIT V V V A A A SavantI C Semiconductor www.DataSheet4U.com Pr oduct Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER.
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