2SA1050 Transistors Datasheet

2SA1050 Datasheet, PDF, Equivalent


Part Number

2SA1050

Description

Silicon POwer Transistors

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1050 Datasheet


2SA1050
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-3 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SA1050
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-140
-140
-5
-12
100
175
-55~200
UNIT
V
V
V
A
W

2SA1050
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.8A
VBE Base-emitter on voltage
IC=-6A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
fT Transition frequency
IC=-6A ; VCE=-5V
IC=-1A ; VCE=-10V
Product Specification
2SA1050
MIN TYP. MAX UNIT
-140
V
-140
V
-5 V
-2.5 V
-1.5 V
-10 µA
-10 µA
55 160
35
70 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating ar ea APPLICATIONS ·For audio and general purpose power amplifier applications P INNING(see Fig.2) PIN 1 2 3 Base Emitte r Collector Fig.1 simplified outline (T O-3) and symbol DESCRIPTION Absolute m aximum ratings(Ta= ) SYMBOL VCBO VCEO V EBO IC PC Tj Tstg PARAMETER Collector-b ase voltage Collector-emitter voltage E mitter-base voltage Collector current C ollector power dissipation Junction tem perature Storage temperature TC=25 COND ITIONS Open emitter Open base Open coll ector VALUE -140 -140 -5 -12 100 175 -5 5~200 UNIT V V V A W SavantIC Semicond uctor www.DataSheet4U.com Product Spec ification Silicon PNP Power Transistor s CHARACTERISTICS Tj=25 unless otherwis e specified PARAMETER CONDITIONS MIN 2 SA1050 SYMBOL TYP. MAX UNIT V(BR)C EO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector.
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