2SA1094 TRANSISTOR Datasheet

2SA1094 Datasheet, PDF, Equivalent


Part Number

2SA1094

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SA1094 Datasheet


2SA1094
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2564
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SA1094
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-140
-140
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W

2SA1094
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1094
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.01A ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-10V
-140
V
-5 V
-2.0 V
-2.0 V
-50 µA
-50 µA
55 240
30
220 pF
70 MHz
hFE-1 classifications
ROY
55-110 80-160 120-240
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power a mplifier applications PINNING(see Fig.2 ) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTIO N Absolute maximum ratings(Ta=25 ) SYM BOL VCBO VCEO VEBO IC IB PC Tj Tstg PAR AMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage C ollector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS O pen emitter Open base Open collector VA LUE -140 -140 -5 -12 -1.2 120 150 -55~1 50 UNIT V V V A A W SavantIC Semicondu ctor www.DataSheet4U.com Product Speci fication Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdow n voltage Collector-emitter saturation voltage Base-emitter on vol.
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