Power Transistor. 2SC2168 Datasheet

2SC2168 Transistor. Datasheet pdf. Equivalent

2SC2168 Datasheet
Recommendation 2SC2168 Datasheet
Part 2SC2168
Description Silicon NPN Power Transistor
Feature 2SC2168; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2168 Datasheet




SavantIC 2SC2168
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=200V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2168
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
Collector current
Collector current-peak
Collector power dissipation TC=25
Junction temperature
Storage temperature
VALUE
200
200
6
2
3
30
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC 2SC2168
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2168
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
200 V
V(BR)CBO Collector-base breakdown voltage
IC=0.5mA ;IE=0
200
V
V(BR)EBO Emitter-base breakdown voltage
IE=0.5mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A
1.0 V
ICBO Collector cut-off current
VCB=200V;IE=0
10 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
10 µA
hFE DC current gain
IC=0.1A ; VCE=5V
50
fT Transition frequency
IC=0.1A ; VCE=10V
20 MHz
2



SavantIC 2SC2168
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC2168
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3







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