2SC2168 Transistor Datasheet

2SC2168 Datasheet, PDF, Equivalent


Part Number

2SC2168

Description

Silicon NPN Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2168 Datasheet


2SC2168
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=200V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2168
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
Collector current
Collector current-peak
Collector power dissipation TC=25
Junction temperature
Storage temperature
VALUE
200
200
6
2
3
30
150
-55~150
UNIT
V
V
V
A
A
W

2SC2168
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2168
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
200 V
V(BR)CBO Collector-base breakdown voltage
IC=0.5mA ;IE=0
200
V
V(BR)EBO Emitter-base breakdown voltage
IE=0.5mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A
1.0 V
ICBO Collector cut-off current
VCB=200V;IE=0
10 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
10 µA
hFE DC current gain
IC=0.1A ; VCE=5V
50
fT Transition frequency
IC=0.1A ; VCE=10V
20 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2168 DESCRIPTION ·With TO-220 package ·High collector -emitter breakdown voltage : VCEO=200V( min) APPLICATIONS ·Power amplifier app lications ·TV vertical deflection appl ications PINNING PIN 1 2 3 Base Collect or;connected to mounting base Emitter D ESCRIPTION Absolute maximum ratings (T a=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Collector c urrent-peak Collector power dissipation Junction temperature Storage temperatu re TC=25 Open emitter Open base Open co llector CONDITIONS VALUE 200 200 6 2 3 30 150 -55~150 UNIT V V V A A W Savant IC Semiconductor www.DataSheet4U.com P roduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unle ss otherwise specified PARAMETER Collec tor-emitter breakdown voltage Collector -base breakdown voltage Emitter-base breakdown voltage Collector-em.
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