POWER TRANSISTOR. 2SB1005 Datasheet

2SB1005 TRANSISTOR. Datasheet pdf. Equivalent


SavantIC 2SB1005
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High DC Current Gain
·DARLINGTON
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector; connected to
mounting base
Emitter
Product Specification
2SB1005
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current-DC
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-50
-50
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W


2SB1005 Datasheet
Recommendation 2SB1005 Datasheet
Part 2SB1005
Description SILICON POWER TRANSISTOR
Feature 2SB1005; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB1005 Datasheet




SavantIC 2SB1005
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA, IE=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ,IB=-30mA
VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-40mA
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-50V, IE=0
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-3V
hFE-2
DC current gain
IC=-4A ; VCE=-3V
VF Diode forward voltage
IF=-4A
Product Specification
2SB1005
MIN TYP. MAX UNIT
-50 V
-50 V
-2.5 V
-4.0 V
-0.1 mA
-2.0 mA
750
100
3.5 V
2



SavantIC 2SB1005
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1005
Fig.2 Outline dimensions
3







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