POWER TRANSISTOR. 2SB1007 Datasheet

2SB1007 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SB1007
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB1007 Datasheet

www.DataSheet4U.com 2SB1007 Datasheet
SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1007 Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emi 2SB1007 Datasheet
Recommendation Recommendation Datasheet 2SB1007 Datasheet




2SB1007
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1378
·High breakdown voltage
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1007
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-80
-80
-5
-0.7
1.2
10
150
-55~150
UNIT
V
V
V
A
W



2SB1007
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-50V; IE=0
VEB=-4V; IC=0
hFE DC current gain
IC=-0.1A ; VCE=-3V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IE=50mA ; VCE=-10V
Product Specification
2SB1007
MIN TYP. MAX UNIT
-80 V
-80 V
-5 V
-0.2 -0.4
V
-0.5 µA
-0.5 µA
82 390
14 20 pF
100 MHz
hFE Classifications
PQ
82-180
120-270
R
180-390
2





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