POWER TRANSISTOR. 2SB1009 Datasheet

2SB1009 TRANSISTOR. Datasheet pdf. Equivalent


SavantIC 2SB1009
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1380
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SB1009
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current (DC)
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-40
-32
-5
-2
0.1
10
150
-55~150
UNIT
V
V
V
A
W


2SB1009 Datasheet
Recommendation 2SB1009 Datasheet
Part 2SB1009
Description SILICON POWER TRANSISTOR
Feature 2SB1009; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB1009 Datasheet




SavantIC 2SB1009
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB1009
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
-32
V
VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A
-0.8 V
VBEsat
Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A
-2.0 V
ICBO Collector cut-off current
VCB=-20V; IE=0
-1 µA
IEBO Emitter cut-off current
VEB=-3V; IC=0
-1 µA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
40
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
82 390
fT Transition frequency
IC=-500mA ; VCE=-5V
100 MHz
COB Collector output capacitance
f=1MHz ; VCB=-10V
50 pF
2



SavantIC 2SB1009
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1009
Fig.2 Outline dimensions
3







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