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POWER TRANSISTOR. 2SB1016 Datasheet |
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·Low collector saturation voltage
·Complement to type 2SD1407
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Product Specification
2SB1016
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector -emitter voltage
VEBO
IC
IB
PC
Tj
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-5
-5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1016
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE Base-emitter voltage
IC=-4A; VCE=-5V
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT Transition frequency
IC=-1A; VCE=-5V
COB Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
hFE-1 Classifications
ROY
40-80 70-140 120-240
MIN TYP. MAX UNIT
-100
V
-2.0 V
-1.5 V
-100 µA
-1 mA
40 240
20
5 MHz
270 pF
2
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1016
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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