POWER TRANSISTOR. 2SB1065 Datasheet

2SB1065 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SB1065
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1065 Datasheet
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2SB1065
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1506
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SB1065
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM Collector current-peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-50
-5
-3
-4.5
10
150
-55~150
UNIT
V
V
V
A
A
W



2SB1065
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1065
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
-50
V
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-1.0 V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5 V
ICBO Collector cut-off current
VCB=-40V; IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-1.0 µA
hFE DC current gain
IC=-0.5A ; VCE=-3V
56 390
COB Output capacitance
IE=0 ; VCB=-10V,f=1MHz
50 pF
fT Transition frequency
IC=-0.5A ; VCE=-5V
70 MHz
hFE Classifications
NPQ
R
56-120 82-180 120-270 180-390
2





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