DatasheetsPDF.com

K7J161882B

Part Number	K7J161882B
Manufacturer	Samsung semiconductor
Description	(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
Published	Feb 23, 2009
Detailed Description	K7J163682B K7J161882B com Document Title 512Kx36 & 1Mx18 DDR II SIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDR...
Datasheet	K7J161882B PDF File

Overview

K7J163682B K7J161882B com Document Title 512Kx36 & 1Mx18 DDR II SIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History Rev.
No.
0.
0 0.
1 0.
2 0.
3 History 1.
Initial document.
1.
Change the JTAG Block diagram 1.
Add the speed bin (-25) 1.
Correct the JTAG ID register definition 2.
Correct the AC timing parameter (delete the tKHKH Max value) 1.
Change the Maximum Clock cycle time.
2.
Correct the 165FBGA package ball size.
1.
Add the power up/down sequencing comment.
2.
Update the DC current parameter (Icc and Isb).
3.
Change the Max.
speed bin from -33 to -30.
1.
Change the ISB1.
Speed Bin -30 -25 -20 -16 1.
0 2.
0 1.
Final spec release 1.
Delete the x8 Org.
2.
D...

Similar Datasheet

K7J161882B (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM - Samsung semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)