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POWER TRANSISTOR. 2SC1444 Datasheet

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POWER TRANSISTOR. 2SC1444 Datasheet






2SC1444 TRANSISTOR. Datasheet pdf. Equivalent




2SC1444 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1444

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1444 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturati on voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitt er Collector Fig.1 simplified outline ( TO-66) and symbol DESC.
Manufacture

SavantIC

Datasheet
Download 2SC1444 Datasheet


SavantIC 2SC1444

2SC1444; RIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collec tor-emitter voltage Emitter-base voltag e Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VAL UE 80 60 6 6 1 40 150 -55~150 UNIT V V V A A W SavantIC .


SavantIC 2SC1444

Semiconductor www.DataSheet4U.com Produ ct Specification Silicon NPN Power Tra nsistors CHARACTERISTICS Tj=25 unless o therwise specified PARAMETER Collector- emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter sa turation voltage Base-emitter on voltag e Collector cut-off current Emitter cut -off current DC current gain DC current gain Transition f.


SavantIC 2SC1444

requency CONDITIONS IC=30mA ;IB=0 IE=1mA ;IC=0 IC=6A; IB=1A IC=6A ; VCE=4V VCB= 80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V I C=3A ; VCE=4V IC=0.5A ; VCE=10V 30 15 M IN 60 5 2SC1444 SYMBOL VCEO(SUS) V(BR )EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 f T TYP. MAX UNIT V V 1.5 2.0 0.1 0.1 V V mA mA 10 MHz 2 SavantIC Semic onductor www.DataSheet4U.com Product S pecification Sili.

Part

2SC1444

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1444 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturati on voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitt er Collector Fig.1 simplified outline ( TO-66) and symbol DESC.
Manufacture

SavantIC

Datasheet
Download 2SC1444 Datasheet




 2SC1444
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1444
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
60
6
6
1
40
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1444
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1A
VBE Base-emitter on voltage
IC=6A ; VCE=4V
ICBO Collector cut-off current
VCB=80V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC1444
MIN TYP. MAX UNIT
60 V
5V
1.5 V
2.0 V
0.1 mA
0.1 mA
30
15
10 MHz
2




 2SC1444
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1444
Fig.2 outline dimensions
3






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