PowerTrench MOSFET. FDP150N10 Datasheet

FDP150N10 Datasheet PDF, Equivalent


Part Number

FDP150N10

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDP150N10 Datasheet PDF


FDP150N10 Datasheet
www.DataSheet4U.com
July 2008
FDP150N10
N-Channel PowerTrench® MOSFET
100V, 57A, 15m
tm
Features
• RDS(on) = 12m( Typ.) @ VGS = 10V, ID = 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
FDP Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
Ratings
1.13
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
www.fairchildsemi.com

FDP150N10 Datasheet
Package Marking and Ordering Information TC = 25oC unless otherwise noted
wwwD.DevaitcaeShMeaertk4iUn.gcom
Device
Package
Reel Size
Tape Width
FDP150N10
FDP150N10
TO-220
-
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to 25oC
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 49A
VDS = 20V, ID = 49A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 49A
VGS = 10V, RGEN = 25
VDS = 80V, ID = 49A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 49A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 49A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 49A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.1
-
-
-
-
12
156
3580
340
140
47
164
86
83
53
19
15
-
-
-
41
70
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
15 m
-S
4760
450
210
pF
pF
pF
104 ns
338 ns
182 ns
176 ns
69 nC
- nC
- nC
57 A
228 A
1.3 V
- ns
- nC
FDP150N10 Rev. A
2 www.fairchildsemi.com


Features Datasheet pdf FDP150N10 N-Channel PowerTrench® MOSFET www.DataSheet4U.com July 2008 FDP15 0N10 100V, 57A, 15mΩ Features N-Chan nel PowerTrench MOSFET General Descript ion This N-Channel MOSFET is produced u sing Fairchild Semiconductor’s advanc ed PowerTrench process that has been es pecially tailored to minimize the on-st ate resistance and yet maintain superio r switching performance. ® tm • R DS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge • High performance trenc h technology for extremely low RDS(on) • High power and current handling cap ability • RoHS compliant Application • DC to DC convertors / Synchronous Rectification D G G DS TO-220 FDP Se ries S MOSFET Maximum Ratings TC = 25 oC unless otherwise noted Symbol VDSS V GSS ID IDM EAS dv/dt PD TJ, TSTG TL Par ameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Curr ent Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (.
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