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M02N60B

Stanson Technology
Part Number M02N60B
Manufacturer Stanson Technology
Description N Channel MOSFET
Published Mar 5, 2009
Detailed Description N Channel MOSFET com 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche...
Datasheet PDF File M02N60B PDF File

M02N60B
M02N60B

Overview
N Channel MOSFET com 2.
0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination.
Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1 2 3 1.
Gate 2.
Drain 3.
Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 TO-220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Junction t...


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