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POWER TRANSISTOR. 2SC1609 Datasheet

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POWER TRANSISTOR. 2SC1609 Datasheet






2SC1609 TRANSISTOR. Datasheet pdf. Equivalent




2SC1609 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1609

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1609 DESCRIPTION ·With TO-3 package ·High current cap ability ·Fast switching speed APPLICAT IONS ·Motor control ·Linear and switc hing applications PINNING(see fig.2) PI N 1 2 3 Base Emitter Collector Fig.1 si mplified outline (TO-3) and symbol DESC RIPTION ABSOLUTE MAXIM.
Manufacture

SavantIC

Datasheet
Download 2SC1609 Datasheet


SavantIC 2SC1609

2SC1609; UM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector- base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power diss ipation Junction temperature Storage te mperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 140 120 6 25 30 120 175 -55~175 UNIT V V V A A W THERMAL CHARAC.


SavantIC 2SC1609

TERISTICS SYMBOL Rth j-C PARAMETER Therm al resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor www.Da taSheet4U.com Product Specification S ilicon NPN Power Transistors CHARACTERI STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Co llector-emitter sa.


SavantIC 2SC1609

turation voltage Base-emitter saturation voltage Collector cut-off current Emit ter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 I E=1mA; IC=0 IC=10A;IB=1A IC=20A;IB=2A I C=20A;IB=2A VCB=140V; IE=0 VEB=6V; IC=0 IC=13A ; VCE=2V IC=20A ; VCE=4V 20 10 MIN 120 6 SYMBOL VCEO(SUS) V(BR)EBO VCE sat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 h FE-2 2SC1609 TYP.

Part

2SC1609

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1609 DESCRIPTION ·With TO-3 package ·High current cap ability ·Fast switching speed APPLICAT IONS ·Motor control ·Linear and switc hing applications PINNING(see fig.2) PI N 1 2 3 Base Emitter Collector Fig.1 si mplified outline (TO-3) and symbol DESC RIPTION ABSOLUTE MAXIM.
Manufacture

SavantIC

Datasheet
Download 2SC1609 Datasheet




 2SC1609
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2SC1609
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·Motor control
·Linear and switching applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open emitter
Open base
Open collector
ICM Collector current-peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
140
120
6
25
30
120
175
-55~175
UNIT
V
V
V
A
A
W
MAX
1.17
UNIT
/W




 2SC1609
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1609
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=10A;IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=20A;IB=2A
VBEsat
Base-emitter saturation voltage
IC=20A;IB=2A
ICBO Collector cut-off current
VCB=140V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=13A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=4V
MIN TYP. MAX UNIT
120 V
6V
0.6 V
1.2 V
2.0 V
0.1 mA
0.1 mA
20 100
10
2




 2SC1609
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1609
Fig.2 Outline dimensions
3



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