POWER TRANSISTOR. 2SC2307 Datasheet

2SC2307 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2307
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2307 Datasheet



2SC2307
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
APPLICATIONS
·For power switching applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2307
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
MAX
500
400
7
12
100
150
-55~150
UNIT
V
V
V
A
W



2SC2307
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IC=7A; IB=1.4A
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=7A ; VCE=4V
fT Transition frequency
IC=1A ; VCE=12V
Product Specification
2SC2307
MIN TYP. MAX UNIT
400 V
500 V
7V
0.5 V
1.3 V
100 µA
100 µA
10
18 MHz
2





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