2SC3144 POWER TRANSISTOR Datasheet

2SC3144 Datasheet, PDF, Equivalent


Part Number

2SC3144

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3144 Datasheet


2SC3144
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High switching speed
·High DC current gain
·Wide area of safe operation
·Complement to type 2SA1258
APPLICATIONS
·60V/3A for High-Speed Drivers Applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3144
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current-DC
ICP Collector current-Pulse
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
70
60
5
3
5
20
1.75
125
-55~125
UNIT
V
V
V
A
A
W

2SC3144
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=1.5A ,IB=3mA
VCE(sat)-2 Collector-emitter saturation voltage IC=1.5A ,IB=3mA
ICBO Collector cut-off current
VCB=40V, IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1.5A ; VCE=2V
fT Transition frequency
IC=1.5A ; VCE=5V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1A ;IB1=-IB2=2m A
RL=20D,VCC=20V
Product Specification
2SC3144
MIN TYP. MAX UNIT
60 V
70 V
0.9 1.5
V
2.0 V
0.1 mA
3.0 mA
2000
200 MHz
0.3 µs
1.2 µs
0.2 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Darlington Power Transistors DESCRIPTIO N ·With TO-220C package ·High switchi ng speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1258 APPLICATIONS ·60V/3A for High-Speed Drivers Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3 144 ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitte r voltage Emitter-base voltage Collecto r current-DC Collector current-Pulse TC =25 PC Collector power dissipation Ta=2 5 Tj Tstg Junction temperature Storage temperature 1.75 125 -55~125 CONDITIONS Open emitter Open base Open collector VALUE 70 60 5 3 5 20 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U. com Product Specification Silicon NPN Darlington Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdo.
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