2SC3212A POWER TRANSISTOR Datasheet

2SC3212A Datasheet, PDF, Equivalent


Part Number

2SC3212A

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3212A Datasheet


2SC3212A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SC3212 2SC3212A
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC3212
2SC3212A
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
TC=25
Ta=25
Tstg Storage temperature
VALUE
800
900
500
8
7
15
4
100
3
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3212A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector
cut-off current
2SC3212 VCB=800V; IE=0
2SC3212A VCB=900V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
2SC3212
2SC3212A
IC=5A; VCC=200V
IB1=-IB2=1A
2SC3212
2SC3212A
MIN TYP. MAX UNIT
500 V
1.0 V
1.5 V
100 µA
100 µA
15
8
3.5 MHz
1.0
µs
1.2
2.5 µs
1.0
µs
1.2
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DE SCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High VCB O ·High speed switching APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitte r DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC3212 VCBO Collector-base voltage 2SC3212A VCEO VE BO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC= 25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage t emperature 3 150 -55~150 Open base Open collector Open emitter 900 500 8 7 15 4 100 W V V A A A CONDITIONS VALUE 800 V UNIT SavantIC Semiconductor www.Data Sheet4U.com Product Specification Sil icon NPN Power Transistors 2SC3212 2SC 3212A CHARACTERISTICS Tj=25 unless oth erwise specified PARAMETER Collector-em itter sustaining voltage Collector-emitter saturation voltage Base-e.
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