2SC3220 POWER TRANSISTOR Datasheet

2SC3220 Datasheet, PDF, Equivalent


Part Number

2SC3220

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3220 Datasheet


2SC3220
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3220
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
230
230
7
10
4
80
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.56
UNIT
/W

2SC3220
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3220
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
IEBO Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=10A ; VCE=2V
hFE-2
DC current gain
IC=1mA ; VCE=2V
fT Transition frequency
IC=0.6A ; VCE=10V
MIN TYP. MAX UNIT
230 V
1.0 V
1.5 V
0.1 mA
0.1 mA
15
5
20 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION ·With TO-247 package ·Switching powe r transistor ·High breakdown voltage PINNING PIN 1 2 3 Base Collector;connec ted to mounting base Emitter Fig.1 simp lified outline (TO-247) and symbol DESC RIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Ts tg PARAMETER Collector-base voltage Col lector-emitter voltage Emitter-base vol tage Collector current (DC) Base curren t Total power dissipation Junction temp erature Storage temperature TC=25 Open emitter Open base Open collector CONDIT IONS VALUE 230 230 7 10 4 80 150 -55~15 0 UNIT V V V A A W THERMAL CHARACTERIS TICS SYMBOL Rth j-C PARAMETER Thermal r esistance junction to case MAX 1.56 UNI T /W SavantIC Semiconductor www.DataSh eet4U.com Product Specification Silic on NPN Power Transistors 2SC3220 CHAR ACTERISTICS Tj=25 unless otherwise spec ified PARAMETER Collector-emitter sustaining voltage Collector-emi.
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