2SC3229 POWER TRANSISTOR Datasheet

2SC3229 Datasheet, PDF, Equivalent


Part Number

2SC3229

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3229 Datasheet


2SC3229
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·High voltage: VCEO=300V(min)
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SC3229
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
VALUE
300
300
5
100
20
2
150
-55~150
UNIT
V
V
V
mA
mA
W

2SC3229
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10mA; IB=1m A
V(BR)CEO Collector-emitter breakdown voltage IC=100µA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA; IC=0
hFE-1
DC current gain
IC=0.5mA ; VCE=10V
hFE-2
DC current gain
IC=20mA ; VCE=10V
ICBO Collector cut-off current
VCB=240V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
COB Output capacitance
IE=0; VCB=20V;f=1MHz
fT Transition frequency
IE=20mA ; VCB=20V
Product Specification
2SC3229
MIN TYP. MAX UNIT
1.0 V
300 V
7V
20
30 200
1.0 µA
1.0 µA
4.0 pF
75 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3229 DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For colo r TV chroma output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbo l DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB P C Tj Tstg PARAMETER Collector-base volt age Collector-emitter voltage Emitter-b ase voltage Collector current Base curr ent Collector power dissipation Junctio n temperature Storage temperature Open emitter Open base Open collector CONDIT IONS VALUE 300 300 5 100 20 2 150 -55~1 50 UNIT V V V mA mA W SavantIC Semicon ductor www.DataSheet4U.com Product Spe cification Silicon NPN Power Transisto rs CHARACTERISTICS Tj=25 unless otherwi se specified PARAMETER CONDITIONS MIN 2SC3229 SYMBOL TYP. MAX UNIT VCEsa t V(BR)CEO V(BR)EBO hFE-1 hFE-2 ICBO IE BO COB fT Collector-emitter saturation voltage IC=10mA; IB=1m A .
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