2SC3250 POWER TRANSISTOR Datasheet

2SC3250 Datasheet, PDF, Equivalent


Part Number

2SC3250

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3250 Datasheet


2SC3250
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High VCEO
·Large PC
APPLICATIONS
·For TV video output amplifier applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3250
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
300
300
7
0.1
0.2
15
150
-55~150
UNIT
V
V
V
A
A
W

2SC3250
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3250
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage
IC=50mA ;IB=5mA
VBE Base-emitter on voltage
IC=30mA ; VCE=10V
hFE-1
DC current gain
IC=5mA ; VCE=50V
hFE-2
DC current gain
IC=30mA ; VCE=10V
COB Collector output capacitance
IE=0; VCB=30V,f=1MHz
fT Transition frequency
IE=-20mA ; VCB=30V
MIN TYP. MAX UNIT
300 V
300 V
7V
1.5 V
1.2 V
50 250
30
5.0 pF
70 100
MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3250 DESCRIPTION ·With TO-220 package ·High VCEO ·La rge PC APPLICATIONS ·For TV video outp ut amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounti ng base Emitter DESCRIPTION Absolute m aximum ratings (Ta=25 ) SYMBOL VCBO VCE O VEBO IC ICP PC Tj Tstg PARAMETER Coll ector-base voltage Collector-emitter vo ltage Emitter-base voltage Collector cu rrent Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Op en emitter Open base Open collector VAL UE 300 300 7 0.1 0.2 15 150 -55~150 UNI T V V V A A W SavantIC Semiconductor w ww.DataSheet4U.com Product Specificati on Silicon NPN Power Transistors CHARA CTERISTICS Tj=25 unless otherwise speci fied PARAMETER Collector-emitter breakd own voltage Collector-base breakdown vo ltage Emitter-base breakdown voltage Co llector-emitter saturation voltage Base-emitter on voltage DC curre.
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