2SC3320 POWER TRANSISTOR Datasheet

2SC3320 Datasheet, PDF, Equivalent


Part Number

2SC3320

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3320 Datasheet


2SC3320
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3320
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth (j-c)
Thermal resistance from junction to case
VALUE
500
400
7
15
5
80
150
-65~150
UNIT
V
V
V
A
A
W
VALUE
1.56
UNIT
/W

2SC3320
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=6A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=7.5A IB1=1.5A
IB2=-3A RL=20C
PW=20µs;Duty=<2%
Product Specification
2SC3320
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
1.0 mA
1.0 mA
10
0.5 µs
1.5 µs
0.15 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3320 DESCRIPTION ·With TO-3PN package ·High voltage , high speed switching ·High reliability APPLICATIONS ·Switching regulators · Ultrasonic generators ·High frequency inverters ·General purpose power ampli fiers PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter Fig. 1 simplified outline (TO-3PN) and symbo l DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base volta ge Collector-emitter voltage Emitter-ba se voltage Collector current Base curre nt Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 5 80 150 - 65~150 UNIT V V V A A W THERMAL CHARAC TERISTICS SYMBOL Rth (j-c) PARAMETER Th ermal resistance from junction to case VALUE 1.56 UNIT /W SavantIC Semiconduc tor www.DataSheet4U.com Product Specification Silicon NPN Power Tran.
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