2SC3346 POWER TRANSISTOR Datasheet

2SC3346 Datasheet, PDF, Equivalent


Part Number

2SC3346

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3346 Datasheet


2SC3346
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1329
·High speed switching time
: tstg=1.0µs(Typ.)
·Low collector saturation voltage
: VCE(sat)=0.4V(Max.)@IC=6A
APPLICATIONS
·For high current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3346
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
80
6
12
2
40
150
-55~150
UNIT
V
V
V
A
A
W

2SC3346
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=0.3A
ICBO Collector cut-off current
VCB=80V ;IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=6A ; VCE=1V
fT Transition frequency
IC=1A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V,f=1MHz
Switching times
Ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.3A;
RL=5E,VCC=30V
Pw=20µs ;DutyF1%
Product Specification
2SC3346
MIN TYP. MAX UNIT
80 V
0.2 0.4
V
0.9 1.2
V
10 µA
10 µA
70 240
40
80 MHz
220 pF
0.2 µs
1.0 µs
0.2 µs
hFE-1 classifications
OY
70-140
120-240
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -220C package ·Complement to type 2SA1 329 ·High speed switching time : tstg= 1.0µs(Typ.) ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A 2 SC3346 APPLICATIONS ·For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute max imum ratings(Ta=25 ) SYMBOL VCBO VCEO V EBO IC IB PC Tj Tstg PARAMETER Collecto r-base voltage Collector-emitter voltag e Emitter-base voltage Collector curren t Base current Collector dissipation Ju nction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 6 12 2 40 1 50 -55~150 UNIT V V V A A W SavantIC S emiconductor www.DataSheet4U.com Produ ct Specification Silicon NPN Power Tra nsistors CHARACTERISTICS Tj=25 unless o therwise specified PARAMETER Collector- emitter breakdown voltage Collector-emitter saturation voltage Base-e.
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