DatasheetsPDF.com



Part Number IXTT110N10P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description N-Channel MOSFET
Datasheet IXTT110N10P DatasheetIXTT110N10P Datasheet (PDF)

  IXTT110N10P   IXTT110N10P
Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 G D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain W °C °C °C °C G = Gate S = Source D (TAB) Features z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advan.



IXTQ110N10P IXTT110N10P S5L986F02


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)