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IRG4BC20FDPBF

Part Number	IRG4BC20FDPBF
Manufacturer	International Rectifier
Description	INSULATED GATEBIPOLAR TRANSISTOR
Published	Apr 16, 2009
Detailed Description	www.datasheet4u.com PD - 94906 IRG4BC20FDPbF Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY D...
Datasheet	IRG4BC20FDPBF PDF File

Overview

www.
datasheet4u.
com PD - 94906 IRG4BC20FDPbF Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free C Fast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
66V @VGE = 15V, IC = 9.
0A n-channel Benefits Absolute Maximum Ratings V CES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM ...

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IRG4BC20FDPBF INSULATED GATEBIPOLAR TRANSISTOR - International Rectifier

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