POWER TRANSISTOR. BU2506DX Datasheet

BU2506DX TRANSISTOR. Datasheet pdf. Equivalent

Part BU2506DX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506DX www.datashee.
Manufacture SavantIC
Total Page 3 Pages
Datasheet
Download BU2506DX Datasheet



BU2506DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DX
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICP Collector current (Pulse)
IB Base current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
1500
700
7.5
5
8
3
5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W



BU2506DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DX
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3.0A ;IB=0.79 A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=3.0A ;IB=0.79 A
VCE=BVCES; VBE=0
TC=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.3 A ; VCE=5V
hFE-2
DC current gain
IC=3.0A ; VCE=5V
VF Diode forward voltage
IF=3.0A
CC Collector capacitance
VCB=10V;IE=0;f=1.0MHz
MIN TYP. MAX UNIT
700 V
7.5 V
5.0 V
1.1 V
1.0
2.0
mA
136 mA
12
3.8 5.5 7.5
1.6 2.0
V
47 pF
2





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