POWER TRANSISTOR. BU2515DF Datasheet

BU2515DF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2515DF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2515DF www.datashee.
Manufacture SavantIC
Datasheet
Download BU2515DF Datasheet



BU2515DF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2515DF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of PC monitors.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
IBM
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base Collector current (DC)
Base current (Pulse)
Ptot Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
7.5
9
20
5
7.5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W



BU2515DF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IB=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
IC=4.5A ;IB=0.9A
VCE=BVCES; VBE=0
Tj=125
VEB=6V; IC=0
IC=1.0A ; VCE=5V
IC=4.5A ; VCE=5V
VF Diode forward voltage
IF=4.5A
Product Specification
BU2515DF
MIN TYP. MAX UNIT
7.5 13.5
V
5.0 V
1.0 V
1.0
2.0
mA
130 mA
13
5 8 10.2
2.2 V
2





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