POWER TRANSISTOR. BU2515DX Datasheet

BU2515DX TRANSISTOR. Datasheet pdf. Equivalent

Part BU2515DX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2515DX www.datashee.
Manufacture SavantIC
Datasheet
Download BU2515DX Datasheet



BU2515DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2515DX
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of PC monitors.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Open emitter
Open base
Open collector
ICP Collector current (Pulse)
IB Base current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
TC=25
Tj Max.operating junction temperature
Tstg Storage temperature
VALUE
1500
800
7.5
9
20
5
7.5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W



BU2515DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2515DX
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A ;IB=0.9A
VCE=BVCES; VBE=0
TC=125
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
VF Diode forward voltage
IF=4.5A
MIN TYP. MAX UNIT
800 V
7.5 13.5
V
5.0 V
1.0 V
1.0
2.0
mA
130 mA
13
5 8 10.2
2.2 V
2





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