POWER TRANSISTOR. BUH715AF Datasheet

BUH715AF TRANSISTOR. Datasheet pdf. Equivalent

Part BUH715AF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH715AF www.datashee.
Manufacture SavantIC
Datasheet
Download BUH715AF Datasheet



BUH715AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH715AF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage,high speed
APPLICATIONS
·Horizontal deflection for monitors.
·Switching mode power supplies
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
Tj Operating junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
1500
700
10
10
20
5
10
57
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
2.2
UNIT
/W



BUH715AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH715AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=7A ;IB=1.5A
VCE=1500V; VBE=0
Tj=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Switching times
ts Storage time
tf Fall time
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
MIN TYP. MAX UNIT
700 V
10 V
1.5 V
1.3 V
1
2
mA
100 µA
10
8 16
2.1 3.1 µs
140 210
ns
2





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