bipolar transistor. 2STC5200 Datasheet

2STC5200 transistor. Datasheet pdf. Equivalent

2STC5200 Datasheet
Recommendation 2STC5200 Datasheet
Part 2STC5200
Description High power NPN epitaxial planar bipolar transistor
Feature 2STC5200; 2STC5200 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ .
Manufacture STMicroelectronics
Datasheet
Download 2STC5200 Datasheet





STMicroelectronics 2STC5200
www.datasheet4u.com
2STC5200
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO > 230V
Complementary to 2STA1943
Fast-switching speed
Typical fT = 30 MHz
Application
Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
1 23
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5200
Marking
2STC5200
Package
TO-264
Packaging
Tube
December 2007
Rev 2
1/9
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9



STMicroelectronics 2STC5200
Electrical ratings
1 Electrical ratings
www.datasheet4u.com Table 2. Absolute maximum ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current
Total dissipation at TC = 25°C
Storage temperature
Operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJ-case Thermal resistance junction-case Max
Value
230
230
5
15
30
150
-55 to 150
150
Value
0.83
2STC5200
Unit
V
V
V
A
A
W
°C
°C
Unit
°C/W
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STMicroelectronics 2STC5200
2STC5200
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
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Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 230 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
Collector-base breakdown
V(BR)CBO voltage (IE = 0)
IC = 100 µA
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
VBE Base-emitter voltage
IC = 7 A VCE = 5 V
hFE DC current gain
IC = 1 A
IC = 7 A
VCE = 5 V
VCE = 5 V
Resistive load
ton Turn-on time
ts Storage time
tf Fall time
fT Transition frequency
VCC = 60 V IC = 5A
IB1= -IB2 = 0.5 A
IC = 1 A VCE = 5 V
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V f = 1 MHz
1. Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
Min. Typ. Max. Unit
5 µA
5 µA
230 V
230 V
5V
3V
1.5 V
80 160
35
0.24
4.7
0.6
30
150
µs
µs
µs
MHz
pF
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