bipolar transistor. 2STC5949 Datasheet

2STC5949 transistor. Datasheet pdf. Equivalent

2STC5949 Datasheet
Recommendation 2STC5949 Datasheet
Part 2STC5949
Description High power NPN epitaxial planar bipolar transistor
Feature 2STC5949; 2STC5949 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■.
Manufacture STMicroelectronics
Datasheet
Download 2STC5949 Datasheet





STMicroelectronics 2STC5949
www.datasheet4u.com
2STC5949
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 250 V
Complementary to 2STA2121
Fast-switching speed
Typical ft = 25 MHz
Fully characterized at 125 oC
Applications
Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5949
Marking
2STC5949
Package
TO-264
Packaging
Tube
July 2008
Rev 3
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www.st.com
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STMicroelectronics 2STC5949
Absolute maximum ratings
1 Absolute maximum ratings
Table 2. Absolute maximum rating
www.datasheet4u.com Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
PTOT
Tstg
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _____ __max
2STC5949
Value
250
250
6
17
34
220
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Value
0.568
Unit
°C/W
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STMicroelectronics 2STC5949
2STC5949
2 Electrical characteristics
Electrical characteristics
www.datasheet4u.com(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 250 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
VBE (1) Base-emitter on voltage
IC = 7 A
VCE = 5 V
hFE DC current gain
IC = 1 A
IC = 7 A
VCE = 5 V
VCE = 5 V
fT Transition frequency
IC = 1 A
VCE = 5 V
1. Pulsed duration = 300 µs, duty cycle 1.5%
Min.
250
250
6
80
35
Typ.
25
Max. Unit
5 µA
5 µA
V
V
V
3V
1.5 V
160
MHz
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