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K9F5608DOC Datasheet, Equivalent, Flash Memory.

(K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

(K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

 

 

 

Part K9F5608DOC
Description (K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
Feature K9F5608Q0C K9F5608D0C K9F5608U0C K9F561 6Q0C K9F5616D0C K9F5616U0C FLASH MEMOR Y Document Title 32M x 8 Bit , 16M x 1 6 Bit NAND Flash Memory www.
datasheet4u .
com Revision History Revision No.
His tory 0.
0 1.
0 Initial issue.
1.
Pin assig nment of TBGA dummy ball is changed.
(b efore) DNU --> (after) N.
C 2.
Add the R p vs tr ,tf & Rp vs ibusy graph for 1.
8 V device (Page 36) 3.
Add the data prot ection Vcc guidence for 1.
8V device - b elow about 1.
1V.
(Page 37) 4.
Add the s pecification of Block Lock scheme.
(Page 32~35) 5.
Pin assignment of TBGA A3 ba ll is changed.
(before) N.
C --> (after) Vss 6.
Pin as .
Manufacture Samsung semiconductor
Datasheet
Download K9F5608DOC Datasheet
Part K9F5608DOC
Description (K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
Feature K9F5608Q0C K9F5608D0C K9F5608U0C K9F561 6Q0C K9F5616D0C K9F5616U0C FLASH MEMOR Y Document Title 32M x 8 Bit , 16M x 1 6 Bit NAND Flash Memory www.
datasheet4u .
com Revision History Revision No.
His tory 0.
0 1.
0 Initial issue.
1.
Pin assig nment of TBGA dummy ball is changed.
(b efore) DNU --> (after) N.
C 2.
Add the R p vs tr ,tf & Rp vs ibusy graph for 1.
8 V device (Page 36) 3.
Add the data prot ection Vcc guidence for 1.
8V device - b elow about 1.
1V.
(Page 37) 4.
Add the s pecification of Block Lock scheme.
(Page 32~35) 5.
Pin assignment of TBGA A3 ba ll is changed.
(before) N.
C --> (after) Vss 6.
Pin as .
Manufacture Samsung semiconductor
Datasheet
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