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Signal Conditioning. EMIF04-EAR02M8 Datasheet |
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www.datasheet4u.com
EMIF04-EAR02M8
4-line IPAD™ EMI filter and ESD protection for headset
Features
■ Lead-free package
■ High attenuation: -30 dB at 900 MHz
■ Low cut-off frequencies: 60 MHz for speaker
lines
■ High current capability: 50 mA per line
■ Very low PCB space consumption:
1.5 mm x 1.7 mm
■ Very thin package: 0.6 mm maximum
■ High efficiency in ESD suppression
IEC6 1000-4-2 level 4
■ High reliability offered by monolithic integration
Complies with following standards:
■ IEC 61000-4-2 level 4 input pins
– 15 kV (air discharge)
– 8 kV (contact discharge)
Applications
■ Mobile phones
Description
The EMIF04-EAR02M8 chip is a highly integrated
device designed to suppress EMI/RFI noise for
headset mobile phone. The new LC architecture
on the speaker lines provides a high attenuation
value maintaining a very low serial resistance.
The 8-lead micro-QFN package offers the
possibility to integrate the whole function in a very
small PCB space.
Additionally, this filter includes ESD protection
circuitry, which prevents damage to the protected
device when subjected to ESD surges up 30 kV.
Micro QFN 8 leads
Figure 1. Pin configuration (bottom side)
MIC_P_Ext
MIC_N_Ext
EAR_Ext
EAR_Ext
MIC_P_Int
MIC_N_Int
EAR_Int
EAR_Int
Figure 2. Equivalent circuit
R
MIC
C
L_MIC
R
MIC
C
L_MIC
L
EAR
C
L_EAR
L
EAR
C
L_EAR
TM: IPAD is a trademark of STMicroelectronics
March 2009
Rev 1
1/12
www.st.com
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Characteristics
1 Characteristics
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Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
ESD IEC 61000-4-2
VPP air discharge
contact discharge
IEAR Maximum rms current per channel
Tj Operating junction temperature
Tstg Storage temperature range
Figure 3. Electrical symbols and parameters
EMIF04-EAR02M8
Value
Unit
30
30
50
-30 to 125
-55 to +150
kV
mA
°C
°C
VBR Breakdown voltage
VRM Stand-off voltage
IRM Leakage current @ VRM
I
VBR VRM
IRM
IRM
V
VRM VBR
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Test conditions
Min.
VBR
IRM
LEAR
RL
RMIC
CL_EAR
CL_MIC
Fc_EAR
Fc_MIC
IR = 1 mA
VRM = 3 V
Parasitic resistance of inductor LEAR
VR = 0 V DC, 1 MHz
VR = 0 V DC, 1 MHz
Cut-off frequency earphone line:
ZSOURCE = ZLOAD = 50 Ω
Cut-off frequency microphone line:
ZSOURCE = ZLOAD = 50 Ω
7
54
84
60
Typ.
1.5
0.30
68
105
76
60
70
Max.
100
0.6
82
126
92
Unit
V
nA
nH
Ω
Ω
pF
pF
MHz
MHz
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EMIF04-EAR02M8
Characteristics
Figure 4. S21 attenuation measurement
0 dB
-5
www.datashe-e1t04u.com
-15
-20
-25
-30 MIC_N
MIC_P
-35 EAR_R
-40 EAR_L
-45
-50
100k
1M
F (Hz)
10M 100M
1G
Figure 5. Analog cross talk measurements
0 dB
-10
-20
-30
-40
-50
MIC_N - MIC_P
-60 EAR_L - MIC_P
-70
100k
1M
10M 100M
F (Hz)
1G
Figure 6.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on one MIC
input (Vin) and on one MIC output
Figure 7.
ESD response to IEC 61000-4-2
(-15 kV air discharge) on one MIC
input (Vin) and on one MIC output
IN
OUT
5.00 V/div
5.00 V/div
100 ns/div
IN
OUT
5.00 V/div
5.00 V/div
100 ns/div
Figure 8.
ESD response to IEC 61000-4-2
Figure 9.
(+15 kV air discharge) on one EAR
input (Vin) and on one EAR output
ESD response to IEC 61000-4-2
(-15 kV air discharge) on one EAR
input (Vin) and on one EAR output
IN
OUT
5.00 V/div
5.00 V/div
100 ns/div
IN
OUT
5.00 V/div
5.00 V/div
100 ns/div
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