Schottky rectifier. STPS200170TV1 Datasheet

STPS200170TV1 rectifier. Datasheet pdf. Equivalent

STPS200170TV1 Datasheet
Recommendation STPS200170TV1 Datasheet
Part STPS200170TV1
Description High voltage power Schottky rectifier
Feature STPS200170TV1; STPS200170TV1 www.datasheet4u.com High voltage power Schottky rectifier Main product characteristi.
Manufacture STMicroelectronics
Datasheet
Download STPS200170TV1 Datasheet





STMicroelectronics STPS200170TV1
www.datasheet4u.com
STPS200170TV1
High voltage power Schottky rectifier
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
2 x 100 A
170 V
150 °C
0.63 V
A1 K1
A2 K2
Features and benefits
Negligible switching losses
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
Insulated package
– ISOTOP
Electrical insulation = 2500 VRMS
Capacitance = 45 pF
Description
High voltage Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of the
applications.
A2
K2
A1
K1
ISOTOP
Order codes
Part Number
STPS200170TV1
Marking
STPS200170TV1
November 2005
Rev 1
1/7
www.st.com
7



STMicroelectronics STPS200170TV1
1 Characteristics
STPS200170TV1
1 Characteristics
Table 1. Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified
www.datasheSeyt4mu.bcoml
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current, δ = 0.5
Tc = 105 °C per diode
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
PARM Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
1. d----P-----t--o----t < ------------1------------- thermal runaway condition for a diode on its own heatsink
dTj Rth(j a)
Table 2. Thermal parameters
170
200
100
700
100000
-55 to + 150
150
V
A
A
A
W
°C
°C
Symbol
Parameter
Value
Unit
Rth(j-c)
Rth(c)
Junction to case
Coupling thermal resistance
Per diode
Total
0.52
0.31
0.1
°C/W
When the diodes are used simultaneously:
Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c)
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 100 A
IF = 200 A
200 µA
30 100 mA
0.83
0.63 0.68
0.975
V
0.78 0.86
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation: P = 0.5 x IF(AV) + 0.0018 IF2(RMS)
2/7



STMicroelectronics STPS200170TV1
STPS200170TV1
1 Characteristics
Figure 1. Conduction losses versus average
current (per diode)
www.datasheet4u.com
PF(AV)(W)
100
90
80
70
60
50
40
30
20
10
0
0 20
δ=0.05 δ=0.1
δ=0.2
δ=0.5 δ=1
IF(AV)(A)
40 60
T
δ=tp/T
tp
80 100 120
Figure 2. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
IF(AV)(A)
120
100
Rth(j-a)=Rth(j-c)
80
60
40
20
0
0
T
δ=tp/T
tp
25
50
Tamb(°C)
75 100 125 150
Figure 3. Non-repetitive surge peak forward
current vesus overload duration
(maximum values per diode)
IM(A)
800
700
600
500
400 TC=50°C
300
200
100
IM
0
t
d =0.5
t(s)
1.E-03
1.E-02
1.E-01
TC=75°C
TC=125°C
1.E+00
Figure 4. Relative variation of thermal
impedance (junction to case) versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 δ=0.5
0.5
0.4
0.3 δ=0.2
0.2 δ=0.1
0.1
0.0
1.E-04
Single pulse
1.E-03
tP(s)
1.E-02
1.E-01
T
δ=tp/T
1.E+00
tp
1.E+01
Figure 5. Reverse leakage current versus
reverse voltage applied (typical
values per diode)
IR(mA)
1.E+03
1.E+02
Tj=150°C
1.E+01
Tj=125°C
1.E+00
1.E-01
1.E-02
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
1.E-03
1.E-04
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 6. Junction capacitances versus
reverse voltage applied (typical
values per diode)
C(pF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
100
1
VR(V)
10
100
1000
3/7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)