SCHOTTKY RECTIFIER. STPS20120D Datasheet

STPS20120D RECTIFIER. Datasheet pdf. Equivalent

STPS20120D Datasheet
Recommendation STPS20120D Datasheet
Part STPS20120D
Description POWER SCHOTTKY RECTIFIER
Feature STPS20120D; ® STPS20120D POWER SCHOTTKY RECTIFIER www.datasheet4u.com Table 1: Main Product Characteristics I.
Manufacture STMicroelectronics
Datasheet
Download STPS20120D Datasheet





STMicroelectronics STPS20120D
STPS20120D
Datasheet
120 V power Schottky rectifier
AK
K
TO-220AC
A
K
Product status link
STPS20120D
Product summary
Symbol
Value
IF(AV)
20 A
VRRM
120 V
Tj (max.)
175 °C
VF (typ.)
0.72 V
Features
• High junction temperature capability
• Avalanche rated
• Low leakage current
• Good trade-off between leakage current and forward voltage drop
• ECOPACK®2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Notebook adapter
Description
This single Schottky rectifier is suited for high frequency switch mode power supply.
Packaged in TO-220AC, the STPS20120D is optimized for use in notebook & LCD
adaptors, desktop SMPS, providing in these applications a margin between the
remaining voltages applied on the diode and the voltage capability of the diode.
DS4232 - Rev 2 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics STPS20120D
STPS20120D
Characteristics
1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current , δ = 0.5 square wave
Tc = 130 °C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
120
30
20
200
619
-65 to +175
175
Unit
V
A
A
A
W
°C
°C
Symbol
Rth(j-c)
Table 2. Thermal resistance parameters
Junction to case
Parameter
Value
2.2
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1) Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 5 A
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Min. Typ. Max.
- 20
- 3 10
- 0.70
- 0.54 0.58
- 0.80
- 0.62 0.66
- 0.93
- 0.72 0.76
To evaluate the conduction losses, use the following equation:
P = 0.56 x IF(AV) + 0.010 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Unit
µA
mA
V
DS4232 - Rev 2
page 2/9



STMicroelectronics STPS20120D
STPS20120D
Characteristics (curves)
1.1 Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
28 PF(AV)(W)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
024
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
6 8 10 12 14 16 18 20 22 24 26
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
22 IF(AV)(A)
20
Rth(j-a) = Rth(j-c)
18
16
14
12 Rth(j-a) = 15°C/W
10
8
6
T
4
2
δ=tp/T
0
0 25
tp
50
T a mb (°C)
75 100 125 150 175
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10 100
1000
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
1.0 Zth(j-c) /Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-03
1.E-02
t P(s)
1.E-01
1.E+00
DS4232 - Rev 2
page 3/9





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